ABB Gate Turn-off asymmetric buffer layer thyristor 5SGF 40L4502-A&S Thyristor Co.,Ltd
 
 
 
 
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Home / Products / ABB thyristor / Gate Turn-off thyristor / asymmetric / ABB Gate Turn-off asymmetric buffer layer thyristor 5SGF 40L4502

ABB Gate Turn-off asymmetric buffer layer thyristor 5SGF 40L4502

ABB Gate Turn-off asymmetric buffer layer thyristor 5SGF 40L4502
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Thyristor type:Gate Turn-off asymmetric buffer layer thyristor;

Thyristor model:5SGF 40L4502

Parameter:
VDRM = 4500 V
ITGQM = 4000 A
ITSM = 25×103A
VT0 = 1.2 V
rT = 0.65 mΩ
VDclink = 2800 V

Description:
GTOs (Gate Turn-off Thyristors) are optimized for low conduction losses. The typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. GTOs are, by nature, relatively slow switches. Typical transition times from on to off state and vice versa are in a range of 10 - 30 microseconds. All GTOs require protective networks called "snubbers" for turn-on and turn-off. The turn-on snubber circuit, in essence an inductor, limits the rate of current rise. For turn-off, the GTO requires a device that limits the rate of voltage rise, in essence a capacitor.
All ABB GTOs are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.
Asymmetric GTOs are divided in two categories: Buffer layer and Standard. Buffer layer GTOs have exceptionally low on-state and dynamic losses. Fine pattern types (5SGF) are optimised for fast switching and transparent emitter (5SGT) for low on-state losses. The Standard GTOs have excellent trade-off between on-state and switching losses.
Features:
1,Patented free-floating silicon technology
2,Low on-state and switching losses
3,Annular gate electrode
4,Industry standard housing
5,Cosmic radiation withstand rating

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