Semikron thyristor chip SKT 13,5 Qu ZG bond-A&S Thyristor Co.,Ltd
 
 
 
 
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Home / Products / Semikron thyristor / thyristor chips / Semikron thyristor chip SKT 13,5 Qu ZG bond

Semikron thyristor chip SKT 13,5 Qu ZG bond

Semikron thyristor chip SKT 13,5 Qu ZG bond
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Thyristor chip model:SKT 13,5 Qu ZG bond

Parameter:

VRRMVDRM(V):1600
IT(DC) @ TC=80°C, Tj=130°C(A):185
ITSM @ Tj=130°C 10ms(A):2300
VGT @ Tj=25°C(V):1.98
IGT @ Tj=25°C(mA):100
tq @ Tj=130°C(μs):150

Features:

1.high current density due to double mesa technology

2.high surge current
3.compatible to thick wire bonding
4.compatible to all standard solder processes

Typical application:

1.controlled rectifier circuits

2.solid state relays

Semikron thyristor chip SKT 13,5 Qu ZG bond
Semikron thyristor chip SKT 13,5 Qu ZG bond
Thyristor chip model:SKT 13,5 Qu ZG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):185 ITSM @ Tj=130°C 10ms(A):2300 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double me
Semikron thyristor chip SKT 8,9 Qu ZG bond
Semikron thyristor chip SKT 8,9 Qu ZG bond
Thyristor chip model:SKT 8,9 Qu ZG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):105 ITSM @ Tj=130°C 10ms(A):1000 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Featur
Semikron thyristor chip SKT 5,6 Qu RG bond
Semikron thyristor chip SKT 5,6 Qu RG bond
Thyristor chip model:SKT 5,6 Qu RG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):60 ITSM @ Tj=130°C 10ms(A):280 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double mesa
Semikron thyristor chip SKT 10,3 Qu RG bond
Semikron thyristor chip SKT 10,3 Qu RG bond
Thyristor chip model:SKT 10,3 Qu RG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):125 ITSM @ Tj=130°C 10ms(A):1250 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double me
Semikron thyristor chip SKT 18,2 Qu ZG bond
Semikron thyristor chip SKT 18,2 Qu ZG bond
Thyristor chip model:SKT 18,2 Qu ZG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):250 ITSM @ Tj=130°C 10ms(A):5000 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double me
Semikron thyristor chip SKT 24,3 Qu ZG bond
Semikron thyristor chip SKT 24,3 Qu ZG bond
Thyristor chip model:SKT 24,3 Qu ZG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):480 ITSM @ Tj=130°C 10ms(A):8200 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):150 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double me
Semikron thyristor chip SKT 10,3 Qu ZG bond
Semikron thyristor chip SKT 10,3 Qu ZG bond
Thyristor chip model:SKT 10,3 Qu ZG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):125 ITSM @ Tj=130°C 10ms(A):1250 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double me
Semikron thyristor chip SKT 8,9 Qu RG bond
Semikron thyristor chip SKT 8,9 Qu RG bond
Thyristor chip model:SKT 8,9 Qu RG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):105 ITSM @ Tj=130°C 10ms(A):1000 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double mes
Semikron thyristor chip SKT 7,0 Qu RG bond
Semikron thyristor chip SKT 7,0 Qu RG bond
Thyristor chip model:SKT 7,0 Qu RG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):75 ITSM @ Tj=130°C 10ms(A):450 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to double mesa
Semikron thyristor chip SKT 15,2 Qu ZG bond
Semikron thyristor chip SKT 15,2 Qu ZG bond
Thyristor chip model:SKT 15,2 Qu ZG bond Parameter: VRRMVDRM(V):1600 IT(DC) @ TC=80°C, Tj=130°C(A):215 ITSM @ Tj=130°C 10ms(A)3200 VGT @ Tj=25°C(V):1.98 IGT @ Tj=25°C(mA):100 tq @ Tj=130°C(μs):150 Features: 1.high current density due to dou